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For å registrere i Cristin må du være vitenskapelig eller administrativt ansatt.
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2019
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| 1. | Khandelwal, Sourabh; Chauhan, Yogesh Singh; Fjeldly, Tor A; Ghosh, Sudip; Pampori, Ahtisham; Mahajan, Dhawal; Dangi, Raghvendra; Ahsan, Sheikh Aamir. ASM GaN: Industry Standard Model for GaN RF and Power Devices – Part 1: DC, CV, and RF Model. IEEE Transactions on Electron Devices 2019 ;Volum 66.(1) s. 80-86 NTNU |
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2015
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| 2. | Goyal, Nitin; Fjeldly, Tor A. Design and Analytical Modeling of Advanced GaN Heterostructures for Device and Sensor Applications. 4th International Symposium on Sensor Science (I3S 2015); 2015-07-13 - 2015-07-15 UiO |
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| 3. | Goyal, Nitin; Fjeldly, Tor A. Design and Analytical Modeling of InAlN/AlN/GaN Heterostructures. WOCSDICE-2015; 2015-06-08 - 2015-06-10 UiO |
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| 4. | Khandelwal, Sourabh; Chauhan, Yogesh; Iniguez, Benjamin; Fjeldly, Tor A. RF Large Signal Modeling of Gallium Nitride HEMTs with Surface-Potential Based ASM-HEMT Model. CSW ISCS/IPRM; 2015-06-28 - 2015-07-02 UiO |
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| 5. | Khandelwal, Sourabh; Ghosh, Y; Chauhan, Yogesh; Iniguez, Benjamin; Fjeldly, Tor A. Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs. IEEE conference proceedings 2015 (ISBN 978-1-4799-8494-7) 4 s. UiO |
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2014
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| 6. | Ghosh, S; Khandelwal, Sourabh; Fjeldly, Tor A. Modeling of Temperature Effects in a Surface-Potential Based ASM-HEMT model. IEEE conference proceedings 2014 (ISBN 978-1-4673-6527-7) UiO |
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| 7. | Goyal, Nitin; Fjeldly, Tor A. Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states. Applied Physics Letters 2014 ;Volum 105. s. - NTNU |
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| 8. | Goyal, Nitin; Fjeldly, Tor A. Erratum: Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1-xN/GaN heterostructures (Journal of Applied Physics (2013) 113 (014505)). Journal of Applied Physics 2014 ;Volum 115.(24) NTNU |
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| 9. | Goyal, Nitin; Fjeldly, Tor A. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures. Applied Physics Letters 2014 ;Volum 105.(3) NTNU |
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| 10. | Iñiguez, Benjamin; Fjeldly, Tor A. Frontiers in Electronics: Advanced Modeling of Nanoscale Electron Devices. World Scientific 2014 (ISBN 978-981-4583-18-3) 195 s. Selected Topics in Electronics and Systems(54) NTNU |
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| 11. | Khandelwal, Sourabh; Fjeldly, Tor A; Cauchan, Y. ASM-HEMT Model: A Physics-based Compact Model for GaN HEMTs. 7th Int. MOS-AK Workshop; 2014-12-12 - 2014-12-12 UiO |
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2013
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| 12. | Fjeldly, Tor A; Monga, Udit. Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs. International Journal of High Speed Electronics and Systems 2013 ;Volum 22.(1) s. - NTNU UiO |
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| 13. | Goyal, Nitin; Fjeldly, Tor A. Application of Bare Surface Barrier Height to Assess Reliability in AlGaN/GaN Heterostructures. International Semiconductor Device Research Symposium 2013 (ISDRS 2013); 2013-12-11 - 2013-12-13 NTNU |
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| 14. | Goyal, Nitin. Design and Modeling of High-Power Semiconductor Devices with Emphasis on AlGaN/GaN HEMTs. Trondheim: NTNU 2013 (ISBN 978-82-471-4530-2) 70 s. Doktoravhandlinger ved NTNU(2013:207) NTNU |
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| 15. | Goyal, Nitin; Fjeldly, Tor A. Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1-xN/GaN heterostructures. Journal of Applied Physics 2013 ;Volum 113.(1) s. - NTNU |
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| 16. | Goyal, Nitin; Fjeldly, Tor A. Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures. Materials Research Society Symposium Proceedings 2013 ;Volum 1538. s. 335-340 NTNU |
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| 17. | Goyal, Nitin; Iñiguez, Benjamin; Fjeldly, Tor A. Surface Barrier Height for Different Al Composition and Barrier Layer Thickness in AlGaN/GaN HEMTs. AIP Conference Proceedings 2013 ;Volum 1566. s. - NTNU |
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| 18. | Khandelwal, Sourabh; Fjeldly, Tor A. Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs. IEEE transactions on microwave theory and techniques 2013 ;Volum 61.(9) s. 3265-3270 NTNU |
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| 19. | Khandelwal, Sourabh. Compact modeling solutions for advanced semiconductor devices. Trondheim: NTNU 2013 (ISBN 978-82-471-4619-4) Doktoravhandlinger ved NTNU(2013:248) NTNU |
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| 20. | Khandelwal, Sourabh; Goyal, Nitin; Fjeldly, Tor A. A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation. Solid-State Electronics 2013 ;Volum 79. s. 22-25 NTNU |
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| 21. | Khandelwal, Sourabh; Sharma, Surya; Chauhan, Yogesh; Gnieting, T; Fjeldly, Tor A. Modeling and simulation methodology for SOA aware circuit design in DC and pulsed mode operation of HV MOSFETs. IEEE Transactions on Electron Devices 2013 ;Volum 60.(2) s. 714-718 NTNU |
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| 22. | Khandelwal, Sourabh; Yadav, Chandan; Agnihotri, Shantanu; Chauhan, Yogesh Singh; Curutchet, Arnaud; Zimmer, Thomas; De Jaeger, Jean-Claude; Defrance, Nicolas; Fjeldly, Tor A. Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design. IEEE Transactions on Electron Devices 2013 ;Volum 60.(10) s. 3216-3222 NTNU |
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| 23. | Khandelwal, Sourabh; Yigletu, F.M.; Iñiguez, B.; Fjeldly, Tor A. A charge-based capacitance model for AlGaAs/GaAs HEMTs. Solid-State Electronics 2013 ;Volum 82. s. 38-40 NTNU |
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| 24. | Monga, Udit; Nilsen, Dag-Martin; Fjeldly, Tor A. Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques. Microelectronics Journal 2013 ;Volum 44.(1) s. 3-6 NTNU UiO |
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| 25. | Yigletu, F M; Iniguez, B; Khandelwal, Sourabh; Fjeldly, Tor A. A compact charge-based physical model for AlGaN/GaN HEMTs. I: Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference. IEEE conference proceedings 2013 ISBN 978-1-4673-2915-6. s. 103-105 NTNU |
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| 26. | Yigletu, F M; Iniguez, Benjamin; Khandelwal, Sourabh; Fjeldly, Tor A. Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs. I: 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. IEEE conference proceedings 2013 ISBN 978-146735736-4. s. 268-271 NTNU |
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| 27. | Yigletu, F M; Khandelwal, Sourabh; Fjeldly, Tor A; Iniguez, B. Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 2013 ;Volum 60.(11) s. 3746-3752 NTNU |
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2012
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| 28. | Fjeldly, Tor A; Monga, Udit. Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles. I: Tech Connect World 2012 Proceedings: Nanotech, Microtech, Biotech, Cleantech. CRC Press 2012 ISBN 978-1-4665-6278-3. s. - NTNU UiO |
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| 29. | Fjeldly, Tor A; Monga, Udit. Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles. NIST Nanotech; 2012-06-18 - 2012-06-21 NTNU |
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| 30. | Fjeldly, Tor A; Monga, Udit; Vishvakarma, Santosh. Compact Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Functions. Int. IEEE Caribbean Conf. on Devices, Circuits and Systems, ICCDCS’2012; 2012-03-14 - 2012-03-17 NTNU |
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| 31. | Fjeldly, Tor A; Monga, Udit; Vishvakarma, Santosh K. Compact unified modeling of multigate MOSFETs based on isomorphic modeling functions. I: Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference. IEEE conference proceedings 2012 ISBN 978-1-4577-1116-9. s. - NTNU |
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| 32. | Goyal, Nitin; Fjeldly, Tor A; Iñiguez, Benjamin. Surface Barrier Height for Different Al Composition and Barrier Layer Thickness in AlGaN/GaN HEMTs. Int. Conf. on Physics of Semiconductors (ICPS 2012); 2012-07-29 - 2012-08-03 NTNU |
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| 33. | Goyal, Nitin; Iniguez, Benjamin; Fjeldly, Tor A. Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures. Applied Physics Letters 2012 ;Volum 101.(10) s. - NTNU |
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| 34. | Grinde, Christopher; Fjeldly, Tor A. Modeling of coupling mechanisms and frequency separation in double disk resonators. Applied Mathematical Modelling 2012 ;Volum 36.(7) s. 2961-2974 USN NTNU |
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| 35. | Khandelwal, Sourabh; Chauhan, Yogesh; Fjeldly, Tor A. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices. IEEE Transactions on Electron Devices 2012 ;Volum 59.(10) s. 2856-2860 NTNU |
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| 36. | Khandelwal, Sourabh; Fjeldly, Tor A. A Physics Based Compact Model for Drain Current in AlGaN/GaN HEMT Devices. Proceedings of the International Symposium on Power Semiconductor Devices & ICs 2012 s. 241-244 NTNU |
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| 37. | Khandelwal, Sourabh; Fjeldly, Tor A. A Physics Based Compact Model for Drain Current in AlGaN/GaN HEMT Devices. 24th IEEE International Symposium on Power Semiconductor Devices and ICs; 2012-06-03 - 2012-06-07 NTNU |
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| 38. | Khandelwal, Sourabh; Fjeldly, Tor A. A physics based compact model for drain current in AlGaN/GaN HEMT devices. I: Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs. IEEE conference proceedings 2012 ISBN 978-1-4577-1595-2. s. - NTNU |
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| 39. | Khandelwal, Sourabh; Fjeldly, Tor A. A Physics Based Compact Model of Gate Capacitance in AlGaN/GaN HEMT devices. Int. IEEE Caribbean Conf. on Devices, Circuits and Systems, ICCDCS'12; 2012-03-14 - 2012-03-17 NTNU |
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| 40. | Khandelwal, Sourabh; Fjeldly, Tor A. A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices. I: Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference. IEEE conference proceedings 2012 ISBN 978-1-4577-1116-9. s. - NTNU |
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| 41. | Khandelwal, Sourabh; Fjeldly, Tor A. A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices. Solid-State Electronics 2012 ;Volum 76. s. 60-66 NTNU |
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| 42. | Khandelwal, Sourabh; Fjeldly, Tor A. A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs. I: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE. IEEE conference proceedings 2012 ISBN 978-1-4673-0928-8. s. - NTNU |
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| 43. | Khandelwal, Sourabh; Fjeldly, Tor A. A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs. IEEE Compound Semiconductor Integrated Circuit Symposium 2012 s. - NTNU |
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| 44. | Khandelwal, Sourabh; Fjeldly, Tor A. A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs. Compound Semiconductor IC Symposium; 2012-10-16 - 2012-10-20 NTNU |
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| 45. | Khandelwal, Sourabh; Fjeldly, Tor A. Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices. IEEE Radio Frequency Integration Technology 2012; 2012-11-21 - 2012-11-27 NTNU |
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| 46. | Khandelwal, Sourabh; Fjeldly, Tor A. Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices. I: Nanotech 2012: Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computation: Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo (Volume 2). CRC Press 2012 ISBN 978-1-4665-6275-2. s. - NTNU |
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| 47. | Khandelwal, Sourabh; Fjeldly, Tor A. Compact Modeling of Intrinsic Capacitances in AlGaN/GaN HEMT devices. Nanotech NSTI 2012; 2012-06-19 - 2012-06-21 NTNU |
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| 48. | Khandelwal, Sourabh; Yigletu, F M; Iniguez, Benjamin; Fjeldly, Tor A. Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices. I: Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium. IEEE conference proceedings 2012 ISBN 978-1-4673-2303-1. s. - NTNU |
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| 49. | Monga, Udit; Khandelwal, Sourabh; Aghassi, J; Sedlmeir, J; Fjeldly, Tor A. Assessment of NBTI in Presence of Self-Heating in High-k SOI FinFETs. IEEE Electron Device Letters 2012 ;Volum 33.(11) s. 1532-1534 UiO NTNU |
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| 50. | Saha, Shimul Chandra; Hanke, Ulrik; Sagberg, Håkon; Fjeldly, Tor A; Sæther, Trond. Tunable lowpass filter with RF MEMS capacitance and transmission line. Active and Passive Electronic Components 2012 ;Volum 2012. s. - SINTEF NTNU USN |
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