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Showing results 1-38 of 38

2020
1 Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Grossner, Ulrike.
Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied 2020 ;Volume 14. p. -
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2019
2 Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann; Vines, Lasse.
Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information 2019 ;Volume 5.(1) p. 1-9
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3 Kvamsdal, Kjell-Erik.
Carbon vacancy engineering in p+n 4H-SiC diodes by thermal processing. Oslo: Fysisk institutt, Universitetet i Oslo 2019
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4 Ayedh, Hussein Mohammed Hussein; Grigorev, Aleksei; Galeckas, Augustinas; Svensson, Bengt Gunnar; Monakhov, Eduard.
Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon. Physica Status Solidi (a) applications and materials science 2019 ;Volume 216.(14) p. 1-5
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5 Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko; Öberg, Sven; Frodason, Ymir Kalmann; Svensson, Bengt Gunnar; Vines, Lasse.
Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB) 2019 ;Volume 100.(1) p. 014103-1-014103-15
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6 Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, J; Vines, Lasse.
Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC. International Conference on Defects in Semiconductors (ICDS30); 2019-07-21 - 2019-07-26
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7 Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann; Vines, Lasse.
Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC. International Conference on Defects in Semiconductors (ICDS30); 2019-07-21 - 2019-07-26
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8 Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Vines, Lasse.
Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si. SpintechX - Tenth International School and Conference on Spintronics and Quantum Information Technology; 2019-06-24 - 2019-06-27
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2018
9 Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P.; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions 2018 ;Volume 86.(12) p. 91-97
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10 Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P.; Nipoti, Roberta; Hallén, Anders; Svensson, Bengt Gunnar.
Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing. Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018); 2018-09-30 - 2018-10-04
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11 Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC. Materials Science Forum 2018 ;Volume 924 MSF. p. 233-236
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12 Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik; Svensson, Bengt Gunnar.
Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum 2018 ;Volume 924. p. 200-203
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13 Linnarsson, MK; Ayedh, Hussein Mohammed Hussein; Hallen, A; Vines, Lasse; Svensson, Bengt Gunnar.
Surface erosion of ion-implanted 4H-SiC during annealing with carbon cap. Materials Science Forum 2018 ;Volume 924 MSF. p. 373-376
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2017
14 Ayedh, Hussein Mohammed Hussein; Azarov, Alexander; Galeckas, Augustinas; Svensson, Bengt Gunnar; Monakhov, Edouard.
DLTS study of the interstitial carbon–oxygen complex in proton irradiated p-type Si. Norwegian Solar Cell Conference 2017; 2017-05-09 - 2017-05-10
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15 Ayedh, Hussein Mohammed Hussein; Iwamoto, Naoya; Nipoti, R; Hallén, Anders; Svensson, Bengt Gunnar.
Formation of D-Center in p-type 4H-SiC epi-layers during high temperature treatments. Materials Science Forum 2017 ;Volume 897 MSF. p. 262-265
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16 Ayedh, Hussein Mohammed Hussein; Nipoti, R; Hallen, A; Svensson, Bengt Gunnar.
Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect. Journal of Applied Physics 2017 ;Volume 122.(2)
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17 Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC. The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017); 2017-09-17 - 2017-09-22
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18 Ayedh, Hussein Mohammed Hussein; Puzzanghera, M.; Svensson, Bengt Gunnar; Nipoti, Roberta.
Dlts study on Al+ ion implanted and 1950oC annealed p-i-n 4H-SiC vertical diodes. Materials Science Forum 2017 ;Volume 897 MSF. p. 279-282
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19 Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik; Svensson, Bengt Gunnar.
Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC. The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017); 2017-09-17 - 2017-09-22
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20 Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Bergman, J. Peder; Svensson, Bengt Gunnar.
Depth-resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination. Materials Science Forum 2017 ;Volume 897. p. 258-261
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21 Gusakov, Vasilii E; Lastovskii, Stanislau B; Murin, Leonid; Tolkacheva, Ekaterina A; Khirunenko, Lyudmila I; Sosnin, Mikhail G; Duvanskii, Andrei V; Markevich, Vladimir P.; Halsall, Matthew P; Peaker, Anthony R.; Kolevatov, Ilia; Ayedh, Hussein Mohammed Hussein; Monakhov, Edouard; Svensson, Bengt Gunnar.
The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms. Physica Status Solidi (a) applications and materials science 2017 ;Volume 214.(7)
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22 Nipoti, Roberta; Ayedh, Hussein Mohammed Hussein; Svensson, Bengt Gunnar.
Defects related to electrical doping of 4H-SiC by ion implantation. Materials Science in Semiconductor Processing 2017 ;Volume 78. p. 13-21
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23 Venkatachalapathy, Vishnukanthan; Ayedh, Hussein Mohammed Hussein; Vajeeston, Ponniah; Vines, Lasse; Monakhov, Edouard; Kuznetsov, Andrej.
Quest for Si based multi-junction solar cells covering the entire solar spectrum. International Symposium on Nanomaterials for clean energy and health applications; 2017-12-06 - 2017-12-08
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2016
24 Alfieri, Giovanni; Mihaila, A.; Ayedh, Hussein Mohammed Hussein; Svensson, Bengt Gunnar; Hazdra, P.; Godignon, P.; Millan, J.; Kicin, S.
Deep level characterization of 5 MeV proton irradiated SiC PiN diodes. Materials Science Forum 2016 ;Volume 858. p. 308-311
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25 Ayedh, Hussein Mohammed Hussein.
Controlling the Carbon Vacancy in 4H-Silicon Carbide. : Det matematisk-naturvitenskapelige fakultet 2016 132 p.
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26 Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Formation and annihilation of carbon vacancies in 4H-SiC. Materials Science Forum 2016 ;Volume 858. p. 331-336
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27 Ayedh, Hussein Mohammed Hussein; Galeckas, Augustinas; Ma, Quanbao; Bobal, Viktor; Iwamoto, Naoya; Nipoti, R; Hallen, Anders; Svensson, Bengt Gunnar.
Point defects in 4H-SiC. Symposium in celebration of the 90th Birthday of Prof. Wolfgang J. Choyke; 2016-08-01 - 2016-08-02
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28 Ayedh, Hussein Mohammed Hussein; Iwamoto, Naoya; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Formation of D-center in p-type 4H-SiC epi-layers during high temperature processing. European Conference on Silicon Carbide and Related Materials ECSCRM 2016; 2016-09-25 - 2016-09-29
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29 Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment. Materials Science Forum 2016 ;Volume 858. p. 414-417
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2015
30 Ayedh, Hussein Mohammed Hussein; Hallen, Anders; Svensson, Bengt Gunnar.
Annihilation of Carbon Vacancies in 4H-SiC epi-layers by near-surface implantation of C, Al and Si ions. 28th International Conference on Defects in Semiconductors; 2015-07-27 - 2015-07-31
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31 Ayedh, Hussein Mohammed Hussein; Hallen, Anders; Svensson, Bengt Gunnar.
Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species. Journal of Applied Physics 2015 ;Volume 118.(17) p. -
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32 Ayedh, Hussein Mohammed Hussein; Nipoti, R; Hallen, A.; Svensson, Bengt Gunnar.
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures. Applied Physics Letters 2015 ;Volume 107.(25) p. -
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33 Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Controlling the Carbon Vacancy Concentration in 4H-Silicon Carbide Subjected to High Temperature Treatment. The International Conference on Silicon Carbide and Related Materials (ICSCRM 2015); 2015-10-04 - 2015-10-09
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2014
34 Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders; Svensson, Bengt Gunnar.
Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics 2014 ;Volume 115.(1)
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35 Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide. ECSCRM2014; 2014-09-21 - 2014-09-26
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36 Svensson, Bengt Gunnar; Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Iwamoto, Naoya; Hallén, Anders; Niputo, R.
Point Defects in 4H-Si. Gordon Research Conference; 2014-06-01 - 2014-06-08
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2013
37 Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Formation of carbon vacancy during high-temperature treatment of 4H-SiC. International Conference on Defects in Semiconductors (ICDS 2013); 2013-07-21 - 2013-07-26
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38 Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt Gunnar.
Formation of Carbon Vacancy in 4H-SiC During High-Temperature Treatment. International Symposium on Semiconductors: Defects, Doping and Diffusion (IS2D3) in honour of Professor Bengt G. Svensson to celebrate his 60th Birthday; 2013-10-24 - 2013-10-25
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