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Prucnal, S; Liu, F; Berencen, Y; Vines, Lasse; Bischoff, L; Grenzer, J; Andric, S; Tiagulskyi, S; Pyszniak, K; Turek, M; Drozdziel, A; Helm, M; Zhou, S; Skorupa, W. Enhancement of carrier mobility in thin Ge layer by Sn co-doping. Semiconductor Science and Technology 2016 ;Volume 31.(10) UiO
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