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2024
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| 1. | Azarov, Alexander; Galeckas, Augustinas; Wendler, Elke; Monakhov, Eduard; Kuznetsov, Andrej. Inverse dynamic defect annealing in ZnO. Applied Physics Letters 2024 ;Volum 124.(4) s. - UiO |
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| 2. | Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej; Grossner, Ulrike; Vines, Lasse. Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing 2024 ;Volum 176. UiO |
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| 3. | Polyakov, Alexander Y.; Vasilev, Anton A.; Kochkova, Anastasiia I.; Shchemerov, Ivan V.; Yakimov, Eugene B.; Miakonkikh, Andrej V.; Chernykh, Alexei V.; Lagov, Petr B.; Pavlov, Yrii S.; Doroshkevich, A.S.; Isaev, R. Sh.; Romanov, Andrei A.; Alexanyan, Luiza A.; Matros, Nikolai; Azarov, Alexander; Kuznetsov, Andrej; Pearton, Stephen. Proton damage effects in double polymorph γ/β-Ga<inf>2</inf>O<inf>3</inf> diodes. Journal of Materials Chemistry C 2024 ;Volum 12. s. 1020-1029 UiO |
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2023
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| 4. | Azad, Fahad; Luo, Caiqin; Azeem, Waqar; Cao, Xing-Zhong; Kuznetsov, Andrej; Shih, Kaimin; Liao, Changzhong; Ling, Francis Chi-Chung. Influence of Er substitution on the properties of ZnO: A comprehensive study. Ceramics International 2023 ;Volum 49.(24) s. 41071-41077 UiO |
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| 5. | Azarov, Alexander; García Fernández, Javier; Zhao, Junlei; Djurabekova, Flyura; He, Huan; He, Ru; Prytz, Øystein; Vines, Lasse; Bektas, Umutcan; Chekhonin, Paul; Klingner, Nico; Hlawacek, Gregor; Kuznetsov, Andrej. Universal radiation tolerant semiconductor. Nature Communications 2023 ;Volum 14. s. 1-8 UiO |
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| 6. | Azarov, Alexander; Park, Ji-Hyeon; Jeon, Dae-Woo; Kuznetsov, Andrej. High mobility of intrinsic defects in α-Ga2O3. Applied Physics Letters 2023 ;Volum 122.(18) s. 182104-1-182104-4 UiO |
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| 7. | Azarov, Alexander; Park, Ji-Hyeon; Jeon, Dae-Woo; Monakhov, Eduard; Kuznetsov, Andrej. Defect migration energies in Ga2O3 polymorphs measured by variations of temperature and flux under irradiation. International Conference on Defects in Semiconductors (ICDS-32); 2023-09-10 - 2023-09-15 UiO |
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| 8. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Lee, In-Hwan; Kuznetsov, Andrej. Thermal versus radiation-assisted defect annealing in β-Ga2O3. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films 2023 ;Volum 41.(2) s. - UiO |
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| 9. | Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Von Wenckstern, Holger; Grundmann, Marius; Kuznetsov, Andrej; Johansen, Klaus Magnus Håland. Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances 2023 ;Volum 13.(1) s. 015211-1-015211-5 UiO |
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| 10. | Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Azarov, Alexander; Pokle, Anuj; Nguyen, Phuong Dan; Vines, Lasse; Kuznetsov, Andrej; Prytz, Øystein. Polymorph engineering and radiation tolerance in β-Ga2O3. SCANDEM 23; 2023-06-11 - 2023-06-15 UiO |
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| 11. | Zhu, Rui; Liang, Huili; Liu, Shangfeng; Yuan, Ye; Wang, Xinqiang; Ling, Francis Chi-Chung; Kuznetsov, Andrej; Zhang, Guangyu; Mei, Zengxia. Non-volatile optoelectronic memory based on a photosensitive dielectric. Nature Communications 2023 ;Volum 14.(1) UiO |
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| 12. | Kuznetsov, Andrej; Pecharapa, Wisanu. Radiation and Emission Phenomena in Combination. Physica Status Solidi (a) applications and materials science 2023 ;Volum 220.(10) s. - UiO |
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| 13. | Lin, Tianxiang; Li, Si-Hua; Ho, Lok-Ping; Kuznetsov, Andrej; Lee, Ho Nam; Chau, Tony; Ling, Francis Chi-Chung. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation. IEEE Electron Device Letters 2023 ;Volum 44.(4) s. 578-581 UiO |
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| 14. | Nayak, Mrutyunjay; Bergum, Kristin; Stan, George E.; Lee, In-Hwan; Kuznetsov, Andrej. Sub-Stochiometric Nickel Oxide Hole-Selective Contacts in Solar Cells: Comparison of Simulations and Experiments with Sputtered Films. Physica Status Solidi (a) applications and materials science 2023 ;Volum 220.(10) s. 1-7 UiO |
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| 15. | Polyakov, Alexander Y.; Yakimov, Eugene B.; Nikolaev, Vladimir I.; Pechnikov, Alexei I.; Miakonkikh, Andrej V.; Azarov, Alexander; Lee, In-Hwan; Vasilev, Anton A.; Kochkova, Anastasiia I.; Shchemerov, Ivan V.; Kuznetsov, Andrej; Pearton, Stephen J.. Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs. Crystals 2023 ;Volum 13.(9) s. 1-25 UiO |
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| 16. | Polyakov, A.Y.; Kochkova, A.I.; Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Miakonkikh, A.V.; Vasilev, A.A.; Chernykh, A.V.; Shchemerov, I.V.; Romanov, A.A.; Kuznetsov, Andrej; Pearton, S.J.. Tuning electrical properties in Ga2O3 polymorphs induced with ion beams. Journal of Applied Physics 2023 ;Volum 133.(9) s. 095701-1-095701-9 UiO |
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| 17. | Polyakov, A.Y.; Kuznetsov, Andrej; Azarov, Alexander; Miakonkikh, A.V.; Chernykh, A.V.; Vasilev, A.A.; Shchemerov, I.V.; Kochkova, A.I.; Matros, N.R.; Pearton, S.J.. The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3. Journal of materials science. Materials in electronics 2023 ;Volum 34.(15) s. - UiO |
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| 18. | Polyakov, A.Y.; Nikolaev, V.I.; Pechnikov, A.I.; Yakimov, E.B.; Karpov, S. Yu.; Stepanov, S.I.; Shchemerov, I.V.; Vasilev, A.A.; Chernykh, A.V.; Kuznetsov, Andrej; Lee, In-Hwan; Pearton, S.J.. Two-dimensional hole gas formation at the κ-Ga<inf>2</inf>O<inf>3</inf> /AlN heterojunction interface. Journal of Alloys and Compounds 2023 ;Volum 936. s. - UiO |
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| 19. | Polyakov, A.Y.; Vasilev, A.A.; Shchemerov, I.V.; Chernykh, A.V.; Shetinin, I.V.; Zhevnerov, E.V.; Kochkova, A.I.; Lagov, P.B.; Miakonkikh, A.V.; Pavlov, Yu.S.; Kobets, U.A.; Lee, In-Hwan; Kuznetsov, Andrej; Pearton, S.J.. Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3. Journal of Alloys and Compounds 2023 ;Volum 945. s. 1-6 UiO |
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| 20. | Samriti, NN; Rumyantseva, Marina; Sun, Shuhui; Kuznetsov, Andrej; Prakash, Jai. Emerging nanomaterials in the detection and degradation of air pollutants. Current Opinion in Environmental Science & Health 2023 ;Volum 35. s. - UiO |
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2022
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| 21. | Azarov, Alexander; Bazioti, Kalliopi; Venkatachalapathy, Vishnukanthan; Ponniah, Vajeeston; Monakhov, Eduard; Kuznetsov, Andrej. Disorder-Induced Ordering in Gallium Oxide Polymorphs. Physical Review Letters 2022 ;Volum 128.(1) UiO |
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| 22. | Azarov, Alexander; Bazioti, Kalliopi; Venkatachalapathy, Vishnukanthan; Vajeeston, Ponniah; Monakhov, Eduard; Kuznetsov, Andrej. Disorder-induced ordering in Ga2O3 polymorphs. fall E-MRS; 2022-09-19 - 2022-09-22 UiO |
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| 23. | Azarov, Alexander; Bazioti, Kalliopi; Venkatachalapathy, Vishnukanthan; Vajeeston, Ponniah; Monakhov, Eduard; Kuznetsov, Andrej. Ion-beam-induced phase transitions in gallium oxide: impact of the implantation temperature. 29th international conference on atomic collisions in solids (ICACS 2022); 2022-06-19 - 2022-06-24 UiO |
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| 24. | Azarov, Alexander; Galeckas, Augustinas; Ling, Francis Chi-Chung; Kuznetsov, Andrej. Tuning defect-related optical bands by channeling implants in semiconductors. Journal of Physics D: Applied Physics 2022 ;Volum 56.(3) s. - UiO |
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| 25. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Karaseov, Platon; Titov, Andrei; Karabeshkin, Konstantin; Struchkov, Andrei; Kuznetsov, Andrej. Interplay of the disorder and strain in gallium oxide. Scientific Reports 2022 ;Volum 12.(1) s. - UiO |
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| 26. | Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej; Vines, Lasse; Grossner, Ulrike. Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime. International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022; 2022-09-12 - 2022-09-16 UiO |
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| 27. | Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller; Vines, Lasse; Kuznetsov, Andrej. Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. The 4th International Conference on Radiation and Emission in Materials; 2022-04-06 - 2022-04-08 SINTEF UiO |
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| 28. | Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller; Vines, Lasse; Kuznetsov, Andrej. Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science 2022 s. 1-7 SINTEF UiO |
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| 29. | Ho, Lok-Ping; Younas, Muhammad; Borgersen, Jon; Khan, Rao Tahir Ali; Rezvani, Seyed Javad; Pollastri, Simone; Akhtar, Muhammad Javed; Nadeem, Muhammad; Huang, Dong; Shi, Ying-Li; Kuznetsov, Andrej; Ling, Francis Chi-Chung. Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias. Journal of Physics D: Applied Physics 2022 ;Volum 55.(31) s. - UiO |
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| 30. | Huang, Dong; Shi, Yingli; Younas, Muhammad; Khan, Rao Tahir Ali; Nadeem, Muhammad; Shati, Khaqan; Harfouche, Messaoud; Kentsch, Ulrich; Liu, Zhifu; Li, Yongxiang; Zhou, Shengqiang; Kuznetsov, Andrej; Ling, Francis Chi-Chung. High Dielectric Transparent Film Tailored by Acceptor and Donor Codoping. Small 2022 s. - UiO |
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| 31. | Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej; Vines, Lasse. Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics 2022 ;Volum 131. UiO |
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| 32. | Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Garcia Fernandez, Javier; Venkatachalapathy, Vishnukanthan; Mikšová, Romana; Macková, Anna; Kuznetsov, Andrej; Prytz, Øystein; Vines, Lasse. Structure and luminescence properties of Si-implanted β-Ga2O3. Nordic Nanolab User Meeting (NNUM) 2022; 2022-05-05 - 2022-05-06 UiO |
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| 33. | Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, R.; MacKová, A.; Kuznetsov, Andrej; Prytz, Øystein; Vines, Lasse. Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics 2022 ;Volum 131.(12) s. - UiO |
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| 34. | Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, Romana; Macková, Anna; Garcia Fernandez, Javier; Kuznetsov, Andrej; Prytz, Øystein; Vines, Lasse. Structural Transformation of β-Ga2O3 through Si-implantation. The 5th U.S. Gallium Oxide Workshop (GOX 2022); 2022-08-07 - 2022-08-10 UiO |
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| 35. | Norby, Truls; Karsthof, Robert Michael; Saeed, Sarmad Waheed; Kuznetsov, Andrej; Vines, Lasse. The p-n junction has nothing to do with ionics. Does it?. Bunsen Colloquium: New Horizons of Solid State Ionics; 2022-07-28 - 2022-07-29 UiO |
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| 36. | Olsen, Vegard Skiftestad; Frodason, Ymir Kalmann; Hommedal, Ylva Knausgård; Nielsen, Dina Marie; Weiser, Philip Michael; Johansen, Klaus Magnus H; Lee, In-Hwan; Kuznetsov, Andrej; Vines, Lasse. Li and group-III impurity doping in ZnSnN2: Potential and limitations. PHYSICAL REVIEW MATERIALS 2022 ;Volum 6.(12) s. 1-8 UiO |
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| 37. | Vines, Lasse; Monakhov, Eduard; Kuznetsov, Andrej. Defects in semiconductors. Journal of Applied Physics 2022 ;Volum 132.(15) s. - UiO |
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| 38. | Wang, Zhengpeng; Yu, Xinxin; Gong, Hehe; Hu, Tiancheng; Zhang, Yijun; Ji, Xiaoli; Ren, Fangfang; Gu, Shulin; Zheng, Youdou; Zhang, Rong; Kuznetsov, Andrej; Ye, Jiandong. Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga2O3. The Journal of Physical Chemistry Letters 2022 ;Volum 13.(30) s. 7094-7099 UiO |
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2021
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| 39. | Assmann, Nicole; Persson, Clas; Kuznetsov, Andrej; Monakhov, Eduard. Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide. Applied Physics Letters 2021 ;Volum 119.(26) UiO |
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| 40. | Ayedh, Hussein Mohammed Hussein; Kvamsdal, Kjell-Erik; Bobal, V.; Hallén, A.; Ling, Francis Chi-Chung; Kuznetsov, Andrej. Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications. Journal of Physics D: Applied Physics 2021 ;Volum 54.(45) UiO |
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| 41. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard; Kuznetsov, Andrej. Dominating migration barrier for intrinsic defects in gallium oxide at and above room temperature. 31st International Conference on Defects in Semiconductors (ICDS-31); 2021-07-26 - 2021-07-30 UiO |
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| 42. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard; Kuznetsov, Andrej. Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements. Applied Physics Letters 2021 ;Volum 118.(23) UiO |
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| 43. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard; Kuznetsov, Andrej. Dose-rate effect in β-Ga2O3. The XXV International Conference on Ion-Surface Interactions (ISI-2021); 2021-08-23 - 2021-08-27 UiO |
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| 44. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard; Kuznetsov, Andrej. Radiation defect dynamics in β-Ga2O3: ion flux vs irradiation temperature. Applied Nuclear Physics conference (ANPC-2021); 2021-09-12 - 2021-09-17 UiO |
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| 45. | Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Monakhov, Eduard; Lee, In-Hwan; Kuznetsov, Andrej. Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Applied Physics Letters 2021 ;Volum 119.(18) UiO |
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| 46. | Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent; Kuznetsov, Andrej; Vines, Lasse. Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB) 2021 ;Volum 104. UiO |
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| 47. | Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej; Grossner, Ulrike; Vines, Lasse. Stability, evolution and diffusion of intrinsic point defects in 4H-SiC. European Conference on Silicon Carbide and Related Materials (ECSCRM) 2021; 2021-10-25 - 2021-10-28 UiO |
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| 48. | Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Kuznetsov, Andrej; Vines, Lasse; Prytz, Øystein. Thermal evolution of point and extended defects in N-implanted ZnO and (ZnO)1−x(GaN)x thin films: STEM-EELS investigations. 31st International Conference on Defects in Semiconductors ICDS 31; 2021-07-26 - 2021-07-30 UiO |
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| 49. | Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Wenckstern, Holger von; Grundmann, Marius; Kuznetsov, Andrej. Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics 2021 ;Volum 130.(8) UiO |
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| 50. | Durand, A.; Baron, Y.; Redjem, W.; Herzig, T.; Benali, A.; Pezzagna, S.; Meijer, J.; Kuznetsov, Andrej; Gérard, J.-M.; Robert-Philip, I.; Abbarchi, M.; Jacques, V.; Cassabois, G.; Dréau, A.. Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon. Physical Review Letters 2021 ;Volum 126.(8) s. - UiO |
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