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Viser treff 1-16 av 16

2018
1 Vines, Lasse; Bhoodoo, Chidanand; Von Wenckstern, H; Grundmann, M.
Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; Implications for instrinsic defect formation and charge neutrality level. Journal of Physics: Condensed Matter 2018 ;Volum 30.(2) s. -
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2017
2 Arcadipane, E; Sanz, R; Amiard, G; Boninelli, S; Impellizzeri, G; Privitera, V; Bonkerud, Julie; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar; Romano, L.
Correction: Single-crystal TiO2 nanowires by seed assisted thermal oxidation of Ti foil: synthesis and photocatalytic properties (RSC Adv. (2016) 6 (55490-55498) DOI: 10.1039/C6RA09088E. RSC Advances 2017 ;Volum 7.(19) s. 11222-11222
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3 Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Diffusivity of the double negatively charged mono-vacancy in silicon. Journal of Physics: Condensed Matter 2017 ;Volum 29.(20) s. -
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4 Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar.
Formation and Evolution of E3 centers in Hydrothermally grown Zinc Oxide. International conference on defects in semiconductors; 2017-07-31 - 2017-08-05
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5 Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar.
Formation and evolution of E3 centers in hydrothermally grown zinc oxide. Materials Science in Semiconductor Processing 2017 ;Volum 69. s. 13-18
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2016
6 Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Evolution Kinetics of Elementary Point Defects in ZnO Implanted with Low Fluences of Helium at Cryogenic Temperature. International Workshop on Zinc Oxide; 2016-10-30 - 2016-11-02
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7 Arcadipane, E.; Sanz, R; Amiard, G.; Boninelli, S.; Impellizzeri, G; Privitera, V.; Bonkerud, Julie; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar; Romano, L..
Single-crystal TiO2 nanowires by seed assisted thermal oxidation of Ti foil: Synthesis and photocatalytic properties. RSC Advances 2016 ;Volum 6.(60) s. 55490-55498
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8 Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Evolution kinetics of elementary point defects in ZnO implanted with low fluences of helium at cryogenic temperature. Physical Review B. Condensed Matter and Materials Physics 2016 ;Volum 94.(20) Suppl. 205204
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9 Hupfer, Alexander; Bhoodoo, Chidanand; Persson, Clas; Vines, Lasse; Svensson, Bengt Gunnar.
Formation and evolution of E3 centers in hydrothermally grown zinc oxide. International workshop on zinc oxide; 2016-10-30 - 2016-11-02
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10 Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar.
Formation and annihilation of E4 centers in ZnO: Influence of hydrogen. Journal of Applied Physics 2016 ;Volum 119.(18)
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11 Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar.
Formation and annihilation of E4 centers in ZnO: influence of hydrogen. Gordon Research Conference on Defects in Semiconductors; 2016-08-14 - 2016-08-19
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2014
12 Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Formation kinetics of a deep acceptor-like level in helium-implanted ZnO. 8th International Workshop on Zinc Oxide and Related Materials (IWZnO 2014); 2014-09-07 - 2014-09-11
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13 Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Annealing Kinetics of The Single Vacancy in Silicon studied By Low Temperature Irradiation And Deep Level Transient Spectroscopy. The Renewable Energy Research Conference (RERC) 2014; 2014-06-16 - 2014-06-18
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14 Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar.
The E3 center in zinc oxide: Evidence for involvement of hydrogen. Applied Physics Letters 2014 ;Volum 104.(9)
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2013
15 Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Dopant concentration dependence of local compensation in low-dose ion-bombarded n-type Silicon. 25th Nordic Semiconductor Meeting; 2013-06-09 - 2013-06-12
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16 Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard; Svensson, Bengt Gunnar.
Dopant concentration dependence of local compensation in low-dose ion-bombarded Silicon. 27th International Conference on Defects in Semiconductors 2013; 2013-07-21 - 2013-07-26
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